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Link identifier #identifier__132269-1Link identifier #identifier__6034-1Italiano
To unlock the technological potential of graphene and 2D materials and make them viable for real-world applications in electronics and optoelectronics, the van der Waals materials must be directly synthesized on CMOS-friendly substrates, i.e. on semiconductors compatible with silicon.
Our research is focused on the chemical vapor deposition of graphene and other layered materials on non-metals. We recently investigated the in-situ growth of graphene on Germanium wafers with different crystal orientations [i.e. (100), (110), (111)].
By combining scanning probe microscopy (AFM and STM) with spectroscopy techniques (XPS, Raman and ARPES), we shed light on the dependence of the electronic properties of graphene on the peculiar atomic surface termination of the semiconductor substrate.
Highlights
- Link identifier #identifier__11900-2Tuning the Doping of Epitaxial Graphene on a Conventional Semiconductor via Substrate Surface Reconstruction
J. Phys. Chem. Lett. 12, 4, 1262 (2021) - Link identifier #identifier__9234-3Abrupt changes in the graphene on Ge (001) system at the onset of surface melting
Carbon 145, 345 (2019) - Link identifier #identifier__81671-4Investigating the CVD synthesis of graphene on Ge (100): toward layer-by-layer growth
ACS applied materials & interfaces 8, 33083 (2016)
Members
- Link identifier #identifier__168183-5Luciana Di Gaspare
- Link identifier #identifier__181988-6Monica De Seta
- Link identifier #identifier__15736-7Luca Persichetti
Collaborations
- Università di Roma Tor Vergata
- Center for Nanotechnology Innovation @NEST, IIT
- Istituto per la fotonica e la nanotecnologia – CNR-IFN
- Technical University of Denmark – DTU