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Prof. GIOVANNI CAPELLINI

Qualifica	Professore Ordinario
Settore Scientifico Disciplinare	PHYS-03/A
Telefono	0657333340
Cellulare aziendale	82158
Email	giovanni.capellini@uniroma3.it
Indirizzo	Viale Guglielmo Marconi 446
Struttura/Afferenza	Dipartimento di Scienze
Altre informazioni	Curriculum

Contributo in Rivista

• All‐Epitaxial Self‐Assembly of Silicon Color Centers Confined Within Sub‐Nanometer Thin Layers Using Ultra‐Low Temperature Epitaxy, CAPELLINI, GIOVANNI, , 2024Link identifier #identifier_person_135474-1 Dettaglio
• Asymmetric-coupled Ge/SiGe quantum wells for second harmonic generation at 7.1 THz in integrated waveguides: a theoretical study, TALAMAS SIMOLA, ENRICO; DI GASPARE, LUCIANA; CAPELLINI, GIOVANNI; DE SETA, MONICA, , 2024Link identifier #identifier_person_107172-2 Dettaglio
• Evidence of Correlation between Membrane Phase Transition and Clonogenicity in Dehydrating Acinetobacter baumannii: A Combined Micro-Raman and AFM Study, FARDELLI, ELISA; DI GIOACCHINO, MICHAEL; LUCIDI, MASSIMILIANO; CAPECCHI, GIULIA; BRUNI, FABIO; SODO, ARMIDA; VISCA, PAOLO; CAPELLINI, GIOVANNI, , 2024Link identifier #identifier_person_112047-3 Dettaglio
• Full Picture of Lattice Deformation in a Ge1 − xSnx Micro‐Disk by 5D X‐ray Diffraction Microscopy, CAPELLINI, GIOVANNI, , 2024Link identifier #identifier_person_193834-4 Dettaglio
• High-quality CMOS compatible n-type SiGe parabolic quantum wells for intersubband photonics at 2.5-5 THz, CAMPAGNA, ELENA; TALAMAS SIMOLA, ENRICO; CAPELLINI, GIOVANNI; DI GASPARE, LUCIANA; DE SETA, MONICA, , 2024Link identifier #identifier_person_76711-5 Dettaglio
• Nanoheteroepitaxy of Ge and SiGe on Si: role of composition and capping on quantum dot photoluminescence, CAPELLINI, GIOVANNI, , 2024Link identifier #identifier_person_75610-6 Dettaglio
• Polarization-resolved Raman spectroscopy reveals the atomic local ordering in silicon germanium tin epitaxial alloys, CAPELLINI, GIOVANNI, , 2024Link identifier #identifier_person_35666-7 Dettaglio
• Quantum steering from phase measurements with limited resources, BIZZARRI, GABRIELE; GIANANI, ILARIA; MANRIQUE, MYLENNE; BRUNI, FABIO; CAPELLINI, GIOVANNI; BARBIERI, MARCO, , 2024Link identifier #identifier_person_163253-8 Dettaglio
• Room Temperature Lattice Thermal Conductivity of GeSn Alloys, CAPELLINI, GIOVANNI, , 2024Link identifier #identifier_person_92546-9 Dettaglio
• Selective Epitaxy of Germanium on silicon for the fabrication of CMOS compatible short-wavelength infrared photodetectors, DE IACOVO, ANDREA; CAPELLINI, GIOVANNI, , 2024Link identifier #identifier_person_105821-10 Dettaglio
• Selective Growth of GaP Crystals on CMOS-Compatible Si Nanotip Wafers by Gas Source Molecular Beam Epitaxy, CAPELLINI, GIOVANNI, , 2024Link identifier #identifier_person_158184-11 Dettaglio
• Thermal expansion and temperature dependence of Raman modes in epitaxial layers of Ge and Ge1−xSnx, CAPELLINI, GIOVANNI, , 2024Link identifier #identifier_person_39909-12 Dettaglio
• Three-Dimensional Reconstruction of Interface Roughness and Alloy Disorder in Ge/GeSi Asymmetric Coupled Quantum Wells Using Electron Tomography, CAPELLINI, GIOVANNI; TALAMAS SIMOLA, ENRICO; DI GASPARE, LUCIANA; DE SETA, MONICA; VIRGILIO, MICHELE, , 2024Link identifier #identifier_person_151058-13 Dettaglio
• Ultrastrong Coupling of Si1−xGex Parabolic Quantum Wells toTerahertz Microcavities, CAMPAGNA, ELENA; TALAMAS SIMOLA, ENRICO; DI GASPARE, LUCIANA; CAPELLINI, GIOVANNI; DE SETA, MONICA, , 2024Link identifier #identifier_person_130296-14 Dettaglio
• Chemical-physical characterisation of 5-Phenyl-1H-tetrazole inhibitive behaviour: a new non-toxic compound for a sustainable protection of Cu-alloys, PRIVITERA, ANTONELLA; PORCELLI, FRANCESCO; PAOLONI, DANIELE; PERSICHETTI, LUCA; SOTGIU, GIOVANNI; RUOCCO, ALESSANDRO; CAPELLINI, GIOVANNI; SODO, ARMIDA, , 2023Link identifier #identifier_person_155589-15 Dettaglio
• Chemical-physical characterisation of 5-Phenyl-1H-tetrazole inhibitive behaviour: a new non-toxic compound for a sustainable protection of Cu-alloys, PRIVITERA, ANTONELLA; PORCELLI, FRANCESCO; PAOLONI, DANIELE; PERSICHETTI, LUCA; RUOCCO, ALESSANDRO; CAPELLINI, GIOVANNI; SODO, ARMIDA, , 2023Link identifier #identifier_person_191741-16 Dettaglio
• Controlling the Nucleation and Growth of Salt from Bodily Fluid for Enhanced Biosensing Applications, CAPELLINI, GIOVANNI, , 2023Link identifier #identifier_person_130329-17 Dettaglio
• Isothermal Heteroepitaxy of Ge1-xSnx Structures for Electronic and Photonic Applications, CAPELLINI, GIOVANNI, , 2023Link identifier #identifier_person_138597-18 Dettaglio
• Lattice Deformation at Submicron Scale: X-Ray Nanobeam Measurements of Elastic Strain in Electron Shuttling Devices, VIRGILIO, MICHELE; CAPELLINI, GIOVANNI, , 2023Link identifier #identifier_person_196106-19 Dettaglio
• Local Alloy Order in a Ge1−xSnx/Ge Epitaxial Layer, CAPELLINI, GIOVANNI; SPIRITO, DAVIDE, , 2023Link identifier #identifier_person_92410-20 Dettaglio
• MBE-based growth of Sn-rich quantum wells and dots at low Sn deposition rates, SPIRITO, DAVIDE; CAPELLINI, GIOVANNI, , 2023Link identifier #identifier_person_2555-21 Dettaglio
• Nanoscale Mapping of the 3D Strain Tensor in a Germanium Quantum Well Hosting a Functional Spin Qubit Device, CAPELLINI, GIOVANNI, , 2023Link identifier #identifier_person_103085-22 Dettaglio
• Subnanometer Control of the Heteroepitaxial Growth of Multimicrometer-Thick Ge/(Si,Ge) Quantum Cascade Structures, TALAMAS SIMOLA, ENRICO; MONTANARI, MICHELE; DI GASPARE, LUCIANA; CAPELLINI, GIOVANNI; DE SETA, MONICA, , 2023Link identifier #identifier_person_126600-23 Dettaglio
• Unintentional p-type conductivity in intrinsic Ge-rich SiGe/Ge heterostructures grown on Si(001), DE SETA, MONICA; CAPELLINI, GIOVANNI, , 2023Link identifier #identifier_person_162122-24 Dettaglio
• Bio-physical mechanisms of dehydrating membranes of Acinetobacter baumannii linked to drought-resistance, FARDELLI, ELISA; LUCIDI, MASSIMILIANO; DI GIOACCHINO, MICHAEL; BASHIRI, SHADI; PERSICHETTI, LUCA; CAPECCHI, GIULIA; GASPERI, TECLA; SODO, ARMIDA; VISCA, PAOLO; CAPELLINI, GIOVANNI, , 2022Link identifier #identifier_person_82950-25 Dettaglio
• Modification of the Ge(001) Subsurface Electronic Structure after Adsorption of Sn, CAPELLINI, GIOVANNI, , 2022Link identifier #identifier_person_42492-26 Dettaglio
• On-Chip Infrared Photonics with Si-Ge-Heterostructures: what is next?, DE SETA, MONICA; ISELLA, GIOVANNI; VIRGILIO, MICHELE; CAPELLINI, GIOVANNI, , 2022Link identifier #identifier_person_529-27 Dettaglio
• Quantitative protein sensing with germanium THz-antennas manufactured using CMOS processes, VITA, GIAN MARCO; DE SIMONE, GIOVANNA; DI MASI, ALESSANDRA; CAPELLINI, GIOVANNI, , 2022Link identifier #identifier_person_79533-28 Dettaglio
• Room Temperature Lasing in GeSn Microdisks Enabled by Strain Engineering, CAPELLINI, GIOVANNI, , 2022Link identifier #identifier_person_195627-29 Dettaglio
• Strain Engineered Electrically Pumped SiGeSn Microring Lasers on Si, CAPELLINI, GIOVANNI, , 2022Link identifier #identifier_person_137290-30 Dettaglio
• Terahertz subwavelength sensing with bio-functionalized germanium fano-resonators, CAPELLINI, GIOVANNI, , 2022Link identifier #identifier_person_147618-31 Dettaglio
• Biocompatibility and antibacterial properties of TiCu(Ag) thin films produced by physical vapor deposition magnetron sputtering, RASHID, SAQIB; VITA, GIAN MARCO; PERSICHETTI, LUCA; IUCCI, GIOVANNA; BATTOCCHIO, CHIARA; VISAGGIO, DANIELA; MARSOTTO, MARTINA; VISCA, PAOLO; BEMPORAD, EDOARDO; ASCENZI, PAOLO; CAPELLINI, GIOVANNI; SEBASTIANI, MARCO; DI MASI, ALESSANDRA, , 2021Link identifier #identifier_person_39405-32 Dettaglio
• CMOS-Compatible Bias-Tunable Dual-Band Detector Based on GeSn/Ge/Si Coupled Photodiodes, TALAMAS SIMOLA, ENRICO; DE IACOVO, ANDREA; COLACE, LORENZO; CAPELLINI, GIOVANNI; ISELLA, GIOVANNI, , 2021Link identifier #identifier_person_187465-33 Dettaglio
• Current leakage mechanisms related to threading dislocations in Ge-rich SiGe heterostructures grown on Si(001), DE SETA, MONICA; CAPELLINI, GIOVANNI, , 2021Link identifier #identifier_person_26464-34 Dettaglio
• Growth Phase- and Desiccation-Dependent Acinetobacter baumannii Morphology: An Atomic Force Microscopy Investigation, LUCIDI, MASSIMILIANO; VISAGGIO, DANIELA; CAPECCHI, GIULIA; CINCOTTI, GABRIELLA; VISCA, PAOLO; CAPELLINI, GIOVANNI, , 2021Link identifier #identifier_person_20457-35 Dettaglio
• New Insights Into the Electronic States of the Ge(001) Surface by Joint Angle-Resolved Photoelectron Spectroscopy and First-Principle Calculation Investigation, CAPELLINI, GIOVANNI, , 2021Link identifier #identifier_person_72331-36 Dettaglio
• n-type Ge/Si antennas for THz sensing, CAPELLINI, GIOVANNI, , 2021Link identifier #identifier_person_124568-37 Dettaglio
• Raman shifts in MBE‐grown SixGe1 − x − ySny alloys with large Si content, CAPELLINI, GIOVANNI, , 2021Link identifier #identifier_person_69698-38 Dettaglio
• The formation of a Sn monolayer on Ge(1 0 0) studied at the atomic scale, CAPELLINI, GIOVANNI, , 2021Link identifier #identifier_person_137160-39 Dettaglio
• Thermoelectric Efficiency of Epitaxial GeSn Alloys for Integrated Si-Based Applications: Assessing the Lattice Thermal Conductivity by Raman Thermometry, CAPELLINI, GIOVANNI, , 2021Link identifier #identifier_person_110636-40 Dettaglio
• Three-Dimensional Interfacing of Cells with Hierarchical Silicon Nano/Microstructures for Midinfrared Interrogation of In Situ Captured Proteins, CAPELLINI, GIOVANNI, , 2021Link identifier #identifier_person_189742-41 Dettaglio
• THz intersubband absorption in n-type Si1−xGex parabolic quantum wells, MONTANARI, MICHELE; CIANO, CHIARA; PERSICHETTI, LUCA; ORTOLANI, MICHELE; DI GASPARE, LUCIANA; CAPELLINI, GIOVANNI; VIRGILIO, MICHELE; DE SETA, MONICA, , 2021Link identifier #identifier_person_177017-42 Dettaglio
• THz intersubband electroluminescence from n-type Ge/SiGe quantum cascade structures, PERSICHETTI, LUCA; MONTANARI, MICHELE; VIRGILIO, MICHELE; CIANO, CHIARA; ORTOLANI, MICHELE; CAPELLINI, GIOVANNI; DI GASPARE, LUCIANA; DE SETA, MONICA, , 2021Link identifier #identifier_person_6440-43 Dettaglio
• Atomic-Scale Insights into Semiconductor Heterostructures: From Experimental Three-Dimensional Analysis of the Interface to a Generalized Theory of Interfacial Roughness Scattering, CAPELLINI, GIOVANNI; MONTANARI, MICHELE; PERSICHETTI, LUCA; DI GASPARE, LUCIANA; VIRGILIO, MICHELE; DE SETA, MONICA, , 2020Link identifier #identifier_person_13142-44 Dettaglio
• Carbon related hillock formation and its impact on the optoelectronic properties of GaN/AlGaN heterostructures grown on Si(111), CAPELLINI, GIOVANNI, , 2020Link identifier #identifier_person_41632-45 Dettaglio
• Composition analysis and transition energies of ultrathin Sn-rich GeSn quantum wells, CAPELLINI, GIOVANNI, , 2020Link identifier #identifier_person_149748-46 Dettaglio
• Controlling the relaxation mechanism of low strain Si1−xGex/Si(001) layers and reducing the threading dislocation density by providing a preexisting dislocation source, DI GASPARE, LUCIANA; DE SETA, MONICA; CAPELLINI, GIOVANNI, , 2020Link identifier #identifier_person_187514-47 Dettaglio
• Design and simulation of losses in Ge/SiGe terahertz quantum cascade laser waveguides, CIANO, CHIARA; VIRGILIO, MICHELE; DI GASPARE, LUCIANA; DE SETA, MONICA; CAPELLINI, GIOVANNI, , 2020Link identifier #identifier_person_75505-48 Dettaglio
• Disentangling elastic and inelastic scattering pathways in the intersubband electron dynamics of n-type Ge/SiGe quantum fountains, BAGOLINI, LUIGI; MONTANARI, MICHELE; PERSICHETTI, LUCA; DI GASPARE, LUCIANA; CAPELLINI, GIOVANNI; ORTOLANI, MICHELE; DE SETA, MONICA; VIRGILIO, MICHELE, , 2020Link identifier #identifier_person_17878-49 Dettaglio
• Electron Population Dynamics in Optically Pumped Asymmetric Coupled Ge/SiGe Quantum Wells: Experiment and Models, CIANO, CHIARA; VIRGILIO, MICHELE; BAGOLINI, LUIGI; MONTANARI, MICHELE; PERSICHETTI, LUCA; DI GASPARE, LUCIANA; CAPELLINI, GIOVANNI; DE SETA, MONICA; ORTOLANI, MICHELE, , 2020Link identifier #identifier_person_154517-50 Dettaglio
• Electron-phonon coupling in n-type Ge two-dimensional systems, CIANO, CHIARA; PERSICHETTI, LUCA; MONTANARI, MICHELE; DI GASPARE, LUCIANA; CAPELLINI, GIOVANNI; ORTOLANI, MICHELE; VIRGILIO, MICHELE; DE SETA, MONICA, , 2020Link identifier #identifier_person_50250-51 Dettaglio
• Ge(Sn) nano-island/Si heterostructure photodetectors with plasmonic antennas, CAPELLINI, GIOVANNI, , 2020Link identifier #identifier_person_144746-52 Dettaglio
• Ge/SiGe multiple quantum well fabrication by reduced-pressure chemical vapor deposition, DE SETA, MONICA; CAPELLINI, GIOVANNI, , 2020Link identifier #identifier_person_64779-53 Dettaglio
• Intersubband Transition Engineering in the Conduction Band of Asymmetric Coupled Ge/SiGe Quantum Wells, PERSICHETTI, LUCA; MONTANARI, MICHELE; CIANO, CHIARA; DI GASPARE, LUCIANA; ORTOLANI, MICHELE; CAPELLINI, GIOVANNI; VIRGILIO, MICHELE; DE SETA, MONICA, , 2020Link identifier #identifier_person_7811-54 Dettaglio
• N-Type Ge/SiGe Multi-Quantum Wells for THz Light Emission: High Quality Growth and Material Parameter Calibration, PERSICHETTI, LUCA; CIANO, CHIARA; MONTANARI, MICHELE; DI GASPARE, LUCIANA; CAPELLINI, GIOVANNI; ORTOLANI, MICHELE; VIRGILIO, MICHELE; DE SETA, MONICA, , 2020Link identifier #identifier_person_42073-55 Dettaglio
• Reduction of threading dislocation density beyond the saturation limit by optimized reverse grading, PERSICHETTI, LUCA; DI GASPARE, LUCIANA; DE SETA, MONICA; CAPELLINI, GIOVANNI, , 2020Link identifier #identifier_person_162291-56 Dettaglio
• Surface-enhanced Raman scattering (SERS)–based immunosystem for ultrasensitive detection of the 90K biomarker, GALLO, VALENTINA; PERSICHETTI, LUCA; CAPELLINI, GIOVANNI; ANTONINI, GIOVANNI, , 2020Link identifier #identifier_person_3426-57 Dettaglio
• Temperature dependence of strain-phonon coefficient in epitaxial Ge/Si(001): A comprehensive analysis, MONTANARI, MICHELE; CAPELLINI, GIOVANNI, , 2020Link identifier #identifier_person_51946-58 Dettaglio
• Terahertz absorption-saturation and emission from electron-doped germanium quantum wells, CIANO, CHIARA; VIRGILIO, MICHELE; BAGOLINI, LUIGI; MONTANARI, MICHELE; PERSICHETTI, LUCA; DI GASPARE, LUCIANA; CAPELLINI, GIOVANNI; DE SETA, MONICA; ORTOLANI, MICHELE, , 2020Link identifier #identifier_person_181986-59 Dettaglio
• Advanced Coherent X-ray Diffraction and Electron Microscopy of Individual InP Nanocrystals on Si Nanotips for III-V-on-Si Electronics and Optoelectronics, CAPELLINI, GIOVANNI, , 2019Link identifier #identifier_person_118576-60 Dettaglio
• Control of Electron-State Coupling in Asymmetric Ge/Si−Ge Quantum Wells, CIANO, CHIARA; MONTANARI, MICHELE; PERSICHETTI, LUCA; DI GASPARE, LUCIANA; CAPELLINI, GIOVANNI; DE SETA, MONICA, , 2019Link identifier #identifier_person_135347-61 Dettaglio
• Dynamics of crosshatch patterns in heteroepitaxy, DI GASPARE, LUCIANA; DE SETA, MONICA; CAPELLINI, GIOVANNI, , 2019Link identifier #identifier_person_134390-62 Dettaglio
• Epitaxy of Si-Ge-Sn-based heterostructures for CMOS-integratable light emitters, CAPELLINI, GIOVANNI, , 2019Link identifier #identifier_person_139825-63 Dettaglio
• Impedance Matching of THz Plasmonic Antennas, CAPELLINI, GIOVANNI, , 2019Link identifier #identifier_person_108479-64 Dettaglio
• Light effective hole mass in undoped Ge/SiGe quantum wells, CAPELLINI, GIOVANNI, , 2019Link identifier #identifier_person_151562-65 Dettaglio
• n-type Ge/SiGe Multi Quantum-Wells for a THz Quantum Cascade Laser, CIANO, CHIARA; DI GASPARE, LUCIANA; MONTANARI, MICHELE; PERSICHETTI, LUCA; ORTOLANI, MICHELE; CAPELLINI, GIOVANNI; VIRGILIO, MICHELE; DE SETA, MONICA, , 2019Link identifier #identifier_person_28032-66 Dettaglio
• Room temperature operation of n-type Ge/SiGe terahertz quantum cascade lasers predicted by non-equilibrium Green's functions, PERSICHETTI, LUCA; DI GASPARE, LUCIANA; DE SETA, MONICA; ORTOLANI, MICHELE; CAPELLINI, GIOVANNI; VIRGILIO, MICHELE, , 2019Link identifier #identifier_person_15855-67 Dettaglio
• Self-Ordered Ge Nanodot Fabrication by Using Reduced Pressure Chemical Vapor Deposition, CAPELLINI, GIOVANNI, , 2019Link identifier #identifier_person_38162-68 Dettaglio
• Shallow and Undoped Germanium Quantum Wells: A Playground for Spin and Hybrid Quantum Technology, CAPELLINI, GIOVANNI, , 2019Link identifier #identifier_person_56518-69 Dettaglio
• Ultrafast carrier recombination in highly n-doped Ge-on-Si films, CAPELLINI, GIOVANNI; VIRGILIO, MICHELE, , 2019Link identifier #identifier_person_197870-70 Dettaglio
• Advanced GeSn/SiGeSn Group IV Heterostructure Lasers, CAPELLINI, GIOVANNI, , 2018Link identifier #identifier_person_79031-71 Dettaglio
• Alignment control of self-ordered three dimensional SiGe nanodots, CAPELLINI, GIOVANNI, , 2018Link identifier #identifier_person_115458-72 Dettaglio
• Epitaxy of Direct Bandgap Group IV Si-Ge-Sn Alloys towards Heterostructure Light Emitters, CAPELLINI, GIOVANNI, , 2018Link identifier #identifier_person_72829-73 Dettaglio
• Gate-controlled quantum dots and superconductivity in planar germanium, VIRGILIO, MICHELE; CAPELLINI, GIOVANNI; SCAPPUCCI, GIORDANO, , 2018Link identifier #identifier_person_188485-74 Dettaglio
• Germanium Plasmon Enhanced Resonators for Label-Free Terahertz Protein Sensing, CAPELLINI, GIOVANNI, , 2018Link identifier #identifier_person_97010-75 Dettaglio
• GeSn/SiGeSn Heterostructure and Multi Quantum Well Lasers, CAPELLINI, GIOVANNI, , 2018Link identifier #identifier_person_34802-76 Dettaglio
• Misfit-Dislocation Distributions in Heteroepitaxy: From Mesoscale Measurements to Individual Defects and Back, DI GASPARE, LUCIANA; DE SETA, MONICA; CAPELLINI, GIOVANNI, , 2018Link identifier #identifier_person_6388-77 Dettaglio
• Morphological evolution of Ge/Si nano-strips driven by Rayleigh-like instability, CAPELLINI, GIOVANNI, , 2018Link identifier #identifier_person_21949-78 Dettaglio
• Photoluminescence from GeSn nano-heterostructures, VIRGILIO, MICHELE; DE SETA, MONICA; DI GASPARE, LUCIANA; CAPELLINI, GIOVANNI, , 2018Link identifier #identifier_person_137508-79 Dettaglio
• Photoluminescence study of interband transitions in few-layer, pseudomorphic, and strain-unbalanced Ge/GeSi multiple quantum wells, MONTANARI, MICHELE; VIRGILIO, MICHELE; PERSICHETTI, LUCA; DI GASPARE, LUCIANA; DE SETA, MONICA; CAPELLINI, GIOVANNI, , 2018Link identifier #identifier_person_28389-80 Dettaglio
• Stable and selective self-assembly of α-lipoic acid on Ge(001) for biomolecule immobilization, CAPELLINI, GIOVANNI, , 2018Link identifier #identifier_person_115937-81 Dettaglio
• The thermal stability of epitaxial GeSn layers, VIRGILIO, MICHELE; CAPELLINI, GIOVANNI, , 2018Link identifier #identifier_person_4739-82 Dettaglio
• A self-ordered, body-centered tetragonal superlattice of SiGe nanodot growth by reduced pressure CVD, CAPELLINI, GIOVANNI, , 2017Link identifier #identifier_person_100728-83 Dettaglio
• Bi-modal nanoheteroepitaxy of GaAs on Si by metal organic vapor phase epitaxy, CAPELLINI, GIOVANNI, , 2017Link identifier #identifier_person_176562-84 Dettaglio
• Electrical and optical properties improvement of GeSn layers formed at high temperature under well-controlled Sn migration, CAPELLINI, GIOVANNI; MONTANARI, MICHELE, , 2017Link identifier #identifier_person_125340-85 Dettaglio
• Exceptional thermal strain reduction by a tilting pillar architecture: Suspended Ge layers on Si (001), CAPELLINI, GIOVANNI, , 2017Link identifier #identifier_person_36570-86 Dettaglio
• Fully coherent Ge islands growth on Si nano-pillars by selective epitaxy, CAPELLINI, GIOVANNI, , 2017Link identifier #identifier_person_118676-87 Dettaglio
• In vitro biocompatibility study of sub-5 nm silica-coated magnetic iron oxide fluorescent nanoparticles for potential biomedical application, FOGLIA, SABRINA; IUCCI, GIOVANNA; CAPELLINI, GIOVANNI, , 2017Link identifier #identifier_person_198895-88 Dettaglio
• Optical critical points of SixGe1-x-ySnyalloys with high Si content, CAPELLINI, GIOVANNI, , 2017Link identifier #identifier_person_180147-89 Dettaglio
• Photoluminescence of phosphorous doped Ge on Si (100), CAPELLINI, GIOVANNI, , 2017Link identifier #identifier_person_25492-90 Dettaglio
• Photoluminescence of phosphorus atomic layer doped Ge grown on Si, CAPELLINI, GIOVANNI, , 2017Link identifier #identifier_person_98179-91 Dettaglio
• Strain relaxation in epitaxial GaAs/Si (0 0 1) nanostructures, CAPELLINI, GIOVANNI, , 2017Link identifier #identifier_person_162179-92 Dettaglio
• Structural and optical characterization of GaAs nano-crystals selectively grown on Si nano-tips by MOVPE, CAPELLINI, GIOVANNI, , 2017Link identifier #identifier_person_121148-93 Dettaglio
• The impact of donors on recombination mechanisms in heavily doped Ge/Si layers, CAPELLINI, GIOVANNI, , 2017Link identifier #identifier_person_49601-94 Dettaglio
• X-ray characterization of self-organized periodic body-centered tetragonal lattices of SiGe dots, CAPELLINI, GIOVANNI, , 2017Link identifier #identifier_person_100256-95 Dettaglio
• Compositional dependence of the band-gap of Ge1-x-YSixSny alloys, MONTANARI, MICHELE; CAPELLINI, GIOVANNI, , 2016Link identifier #identifier_person_182181-96 Dettaglio
• Dislocation-free Ge Nano-crystals via Pattern Independent Selective Ge Heteroepitaxy on Si Nano-Tip Wafers, CAPELLINI, GIOVANNI, , 2016Link identifier #identifier_person_2523-97 Dettaglio
• Misfit dislocation free epitaxial growth of SiGe on compliant nanostructured silicon, CAPELLINI, GIOVANNI, , 2016Link identifier #identifier_person_24952-98 Dettaglio
• Photodetection in Hybrid Single-Layer Graphene/Fully Coherent Germanium Island Nanostructures Selectively Grown on Silicon Nanotip Patterns, CAPELLINI, GIOVANNI, , 2016Link identifier #identifier_person_77150-99 Dettaglio
• Photoluminescence from ultrathin Ge-rich multiple quantum wells observed up to room temperature: Experiments and modeling, CAPELLINI, GIOVANNI, , 2016Link identifier #identifier_person_182722-100 Dettaglio
• Reduced-Pressure Chemical Vapor Deposition Growth of Isolated Ge Crystals and Suspended Layers on Micrometric Si Pillars, CAPELLINI, GIOVANNI, , 2016Link identifier #identifier_person_116645-101 Dettaglio
• Robustness analysis of a device concept for edge-emitting lasers based on strained germanium, CAPELLINI, GIOVANNI, , 2016Link identifier #identifier_person_195409-102 Dettaglio
• Selective Epitaxy of InP on Si and Rectification in Graphene/InP/Si Hybrid Structure, CAPELLINI, GIOVANNI, , 2016Link identifier #identifier_person_154928-103 Dettaglio
• Selective growth of fully relaxed GeSn nano-islands by nanoheteroepitaxy on patterned Si(001), CAPELLINI, GIOVANNI, , 2016Link identifier #identifier_person_94413-104 Dettaglio
• Sn migration control at high temperature due to high deposition speed for forming high-quality GeSn layer, CAPELLINI, GIOVANNI; MONTANARI, MICHELE, , 2016Link identifier #identifier_person_10606-105 Dettaglio
• Ba termination of Ge(001) studied with STM, CAPELLINI, GIOVANNI, , 2015Link identifier #identifier_person_2290-106 Dettaglio
• Bottom-up assembly of metallic germanium, CAPELLINI, GIOVANNI, , 2015Link identifier #identifier_person_103669-107 Dettaglio
• CMOS-compatible optical switching conceptbased on strain-induced refractive-index tuning, CAPELLINI, GIOVANNI, , 2015Link identifier #identifier_person_198557-108 Dettaglio
• Delayed plastic relaxation limit in SiGe islands grown by Ge diffusion from a local source, CAPELLINI, GIOVANNI, , 2015Link identifier #identifier_person_49692-109 Dettaglio
• Engineered Coalescence by Annealing 3D Ge Microstructures into High-Quality Suspended Layers on Si, CAPELLINI, GIOVANNI, , 2015Link identifier #identifier_person_117523-110 Dettaglio
• Epi-cleaning of Ge/GeSn heterostructures, DI GASPARE, LUCIANA; DE SETA, MONICA; SODO, ARMIDA; CAPELLINI, GIOVANNI, , 2015Link identifier #identifier_person_67675-111 Dettaglio
• Growth and Characterization of SiGeSn Quantum Well Photodiodes, CAPELLINI, GIOVANNI, , 2015Link identifier #identifier_person_71731-112 Dettaglio
• Growth and evolution of nickel germanide nanostructures on Ge(001), CAPELLINI, GIOVANNI, , 2015Link identifier #identifier_person_141565-113 Dettaglio
• Imaging structure and composition homogeneity of 300 mm SiGe virtual substrates for advanced CMOS applications by scanning X-ray diffraction microscopy, CAPELLINI, GIOVANNI, , 2015Link identifier #identifier_person_150721-114 Dettaglio
• Modeling of edge-emitting lasers based ontensile strained Germanium microstrips, CAPELLINI, GIOVANNI, , 2015Link identifier #identifier_person_11004-115 Dettaglio
• Non-uniform depth distributions of Sn concentration induced by Sn migration and desorption during GeSnSi layer formation, CAPELLINI, GIOVANNI, , 2015Link identifier #identifier_person_142886-116 Dettaglio
• Radiative and non-radiative recombinations in tensile strained Ge microstrips: Photoluminescence experiments and modeling, CAPELLINI, GIOVANNI, , 2015Link identifier #identifier_person_28545-117 Dettaglio
• Spectroscopic Signatures of AA' and AB Stacking of Chemical Vapor Deposited Bilayer MoS2, CAPELLINI, GIOVANNI, , 2015Link identifier #identifier_person_69421-118 Dettaglio
• Strain and Lattice Orientation Distribution in SiN/Ge CMOS Compatible Light Emitting Microstructures by Quick X-ray Nano-diffraction Microscopy, CAPELLINI, GIOVANNI, , 2015Link identifier #identifier_person_198989-119 Dettaglio
• Structural Mapping of Functional Ge Layers Grown on Graded SiGe Buffers for sub-10 nm CMOS Applications Using Advanced X-ray Nanodiffraction, CAPELLINI, GIOVANNI, , 2015Link identifier #identifier_person_195478-120 Dettaglio
• Tailoring the strain in Si nano-structures for defect-free epitaxial Ge over growth, CAPELLINI, GIOVANNI, , 2015Link identifier #identifier_person_75711-121 Dettaglio
• Zero lattice mismatch and twin-free single crystalline ScN buffer layers for GaN growth on silicon, CAPELLINI, GIOVANNI, , 2015Link identifier #identifier_person_173336-122 Dettaglio
• Combined Effect of Electron and Lattice Temperatures on the Long Intersubband Relaxation Times of Ge/SiGe Quantum Wells, CAPELLINI, GIOVANNI; DE SETA, MONICA, , 2014Link identifier #identifier_person_168957-123 Dettaglio
• Fully coherent growth of Ge on free-standing Si(001)nano-mesas, CAPELLINI, GIOVANNI, , 2014Link identifier #identifier_person_71072-124 Dettaglio
• Interface and nanostructure evolution of Cobalt Germanides on Ge(001), CAPELLINI, GIOVANNI, , 2014Link identifier #identifier_person_188431-125 Dettaglio
• Monitoring the kinetic evolution of self-assembled SiGe islands grown by Ge surface thermal diffusion from a local source, CAPELLINI, GIOVANNI, , 2014Link identifier #identifier_person_63212-126 Dettaglio
• Physical mechanisms of intersubband-absorption linewidth broadening in s-Ge/SiGe quantum wells, DI GASPARE, LUCIANA; CAPELLINI, GIOVANNI, , 2014Link identifier #identifier_person_184201-127 Dettaglio
• Tensile Ge microstructures for lasing fabricated by means of a silicon complementary metal-oxide-semiconductor process, CAPELLINI, GIOVANNI, , 2014Link identifier #identifier_person_38003-128 Dettaglio
• Atomic layer doping of strained Ge-on-insulator thin films with high electron densities, CAPELLINI, GIOVANNI, , 2013Link identifier #identifier_person_73358-129 Dettaglio
• Electronic structure of phosphorus and arsenic δ-doped germanium, CAPELLINI, GIOVANNI, , 2013Link identifier #identifier_person_92548-130 Dettaglio
• Germanium photodetector with 60 GHz bandwidth using inductive gain peaking, CAPELLINI, GIOVANNI, , 2013Link identifier #identifier_person_75973-131 Dettaglio
• New avenues to an old material: controlled nanoscale doping of germanium, CAPELLINI, GIOVANNI, , 2013Link identifier #identifier_person_36651-132 Dettaglio
• Onset of plastic relaxation in the growth of Ge on Si(001) at low temperatures: Atomic-scale microscopy and dislocation modeling, DE SETA, MONICA; CAPELLINI, GIOVANNI, , 2013Link identifier #identifier_person_72798-133 Dettaglio
• Phosphorus Molecules on Ge(001): A Playground for Controlled N-Doping of Germanium at High Densities, CAPELLINI, GIOVANNI, , 2013Link identifier #identifier_person_20313-134 Dettaglio
• Photoluminescence, recombination rate, and gain spectra in optically excited n-type and tensile strained Germanium layers, CAPELLINI, GIOVANNI, , 2013Link identifier #identifier_person_65368-135 Dettaglio
• Radiative recombination and optical gain spectra in biaxially strained n-type Germanium, CAPELLINI, GIOVANNI, , 2013Link identifier #identifier_person_146960-136 Dettaglio
• Strain analysis in SiN/Ge microstructures obtained via Si-complementary metal oxide semiconductor compatible approach, CAPELLINI, GIOVANNI, , 2013Link identifier #identifier_person_96519-137 Dettaglio
• High temperature x ray diffraction measurements on Ge/Si(001) heterostructures: A study on the residual tensile strain, CAPELLINI, GIOVANNI; DE SETA, MONICA, , 2012Link identifier #identifier_person_94090-138 Dettaglio
• Modeling picosecond electron dynamics of pump-probe intersubband spectroscopy in n-type Ge/SiGe quantum wells, DE SETA, MONICA; CAPELLINI, GIOVANNI, , 2012Link identifier #identifier_person_37687-139 Dettaglio
• Narrow intersubband transitions in n-type Ge/SiGe multi-quantum wells: control of the terahertz absorption energy trough the temperature dependent depolarization shift, DE SETA, MONICA; CAPELLINI, GIOVANNI, , 2012Link identifier #identifier_person_146126-140 Dettaglio
• N-type doping of germanium from phosphine: early stages resolved at the atomic level, CAPELLINI, GIOVANNI, , 2012Link identifier #identifier_person_117923-141 Dettaglio
• Stacking of 2D electron gases in Ge probed at the atomic-level and its correlation to low temperature magnetotransport, CAPELLINI, GIOVANNI, , 2012Link identifier #identifier_person_102387-142 Dettaglio
• X-ray diffraction study of plastic relaxation in Ge-rich SiGe virtual substrates, CAPELLINI, GIOVANNI; DE SETA, MONICA, , 2012Link identifier #identifier_person_66353-143 Dettaglio
• A Complete Fabrication Route for Atomic-Scale, Donor-Based Devices in Single-Crystal Germanium, CAPELLINI, GIOVANNI, , 2011Link identifier #identifier_person_76054-144 Dettaglio
• Dual-temperature encapsulation of phosphorus in germanium delta-layers toward ultra-shallow junctions, CAPELLINI, GIOVANNI, , 2011Link identifier #identifier_person_21466-145 Dettaglio
• Fabrication of air-bridge Schottky diodes on germanium for high speed IR detectors, DI GASPARE, LUCIANA; CAPELLINI, GIOVANNI; EVANGELISTI, FLORESTANO, , 2011Link identifier #identifier_person_149374-146 Dettaglio
• Long Intersubband Relaxation Times in n-type Germanium Quantum Wells, CAPELLINI, GIOVANNI; DE SETA, MONICA, , 2011Link identifier #identifier_person_89722-147 Dettaglio
• Phosphorus atomic layer doping of germanium by the stacking of multiple delta layers, CAPELLINI, GIOVANNI, , 2011Link identifier #identifier_person_187342-148 Dettaglio
• Preparation of the Ge(001) surface towards fabrication of atomic-scale germanium devices, CAPELLINI, GIOVANNI, , 2011Link identifier #identifier_person_10595-149 Dettaglio
• Microstructure and magnetic properties of colloidal cobalt nano-clusters, MENEGHINI, CARLO; MOBILIO, SETTIMIO; CAPELLINI, GIOVANNI, , 2010Link identifier #identifier_person_8045-150 Dettaglio
• Near- and far-infrared absorption and electronic structure of Ge-SiGe multiple quantum wells, CAPELLINI, GIOVANNI, , 2010Link identifier #identifier_person_41626-151 Dettaglio
• Strain relaxation in high Ge content SiGe layers deposited on Si, CAPELLINI, GIOVANNI; DE SETA, MONICA, , 2010Link identifier #identifier_person_65969-152 Dettaglio
• Agglomeration process in thin silicon-, strained silicon-, and silicon germanium-on-insulator substrates, CAPELLINI, GIOVANNI, , 2009Link identifier #identifier_person_72497-153 Dettaglio
• Atomic-scale patterning of hydrogen terminated Ge(001) by scanning tunneling microscopy, CAPELLINI, GIOVANNI, , 2009Link identifier #identifier_person_23424-154 Dettaglio
• Conduction band intersubband transitions in Ge/SiGe quantum wells, CAPELLINI, GIOVANNI, , 2009Link identifier #identifier_person_152723-155 Dettaglio
• Influence of encapsulation temperature on Ge:P delta-doped layers, CAPELLINI, GIOVANNI, , 2009Link identifier #identifier_person_178929-156 Dettaglio
• Island and wetting-layer intermixing in the Ge/Si(001) system upon capping, CAPELLINI, GIOVANNI, , 2009Link identifier #identifier_person_191927-157 Dettaglio
• Terahertz intersubband absorption and conduction band alignment in n-type Si/SiGe multiple quantum wells, CAPELLINI, GIOVANNI, , 2009Link identifier #identifier_person_193186-158 Dettaglio
• Ultradense phosphorus in germanium delta-doped layers, CAPELLINI, GIOVANNI, , 2009Link identifier #identifier_person_138284-159 Dettaglio
• 2DEG based on strained Si on SGOI substrate, DI GASPARE, LUCIANA; DE SETA, MONICA; CAPELLINI, GIOVANNI, , 2008Link identifier #identifier_person_136379-160 Dettaglio
• Alloying in Ge(Si)/Si(001) self-assembled islands during their growth and capping: XPS and AFM study, DE SETA, MONICA; CAPELLINI, GIOVANNI, , 2008Link identifier #identifier_person_69887-161 Dettaglio
• High-Speed Near Infrared Optical Receivers Based on Ge Waveguide Photodetectors Integrated in a CMOS Process, CAPELLINI, GIOVANNI, , 2008Link identifier #identifier_person_26176-162 Dettaglio
• Effect of interlayer strain interaction on the island composition and ordering in Ge/Si(001) island superlattices, DE SETA, MONICA; CAPELLINI, GIOVANNI, , 2007Link identifier #identifier_person_12138-163 Dettaglio
• Effect of inter-layer strain interaction on the optical propertiesof Ge/Si(001) island multi-layers, DE SETA, MONICA; CAPELLINI, GIOVANNI, , 2007Link identifier #identifier_person_18388-164 Dettaglio
• GeSi intermixing in Ge nanostructures on Si(111): An XAFS versus STM study, CAPELLINI, GIOVANNI, , 2007Link identifier #identifier_person_183189-165 Dettaglio
• Vertical and lateral ordering of Ge islands grown on Si(001): theory and experiments, CAPELLINI, GIOVANNI, , 2007Link identifier #identifier_person_137141-166 Dettaglio
• Freezing shape and composition of Ge/Si(001) self-assembled islands during silicon capping, CAPELLINI, GIOVANNI, , 2006Link identifier #identifier_person_198018-167 Dettaglio
• Relaxed state of GexSi1-x islands embedded in Si, CAPELLINI, GIOVANNI, , 2006Link identifier #identifier_person_127624-168 Dettaglio
• Self-ordering of a Ge island single layer induced by Si overgrowth, CAPELLINI, GIOVANNI, , 2006Link identifier #identifier_person_16857-169 Dettaglio
• Self-ordering of Ge islands on Si(001) by means of Si overgrowth, EVANGELISTI, FLORESTANO, , 2006Link identifier #identifier_person_101171-170 Dettaglio
• Spontaneous Ge island ordering promoted by partial silicon capping, DE SETA, MONICA; CAPELLINI, GIOVANNI, , 2006Link identifier #identifier_person_5379-171 Dettaglio
• Spontaneous Ge island ordering promoted by partial silicon capping, EVANGELISTI, FLORESTANO, , 2006Link identifier #identifier_person_135005-172 Dettaglio
• Evolution of Ge/Si(001) islands during Si capping at high temperature, CAPELLINI, GIOVANNI; DE SETA, MONICA, , 2005Link identifier #identifier_person_102009-173 Dettaglio
• Ordered growth of Ge island clusters on strain-engineered Si surfaces, CAPELLINI, GIOVANNI, , 2005Link identifier #identifier_person_78740-174 Dettaglio
• Spontaneous ordering of self-assembled-Ge island, CAPELLINI, GIOVANNI, , 2005Link identifier #identifier_person_4897-175 Dettaglio
• Strain-induced ordering of small Ge islands in clusters at the surface of multilayered Si-Ge nanostructures4, CAPELLINI, GIOVANNI; DE SETA, MONICA, , 2005Link identifier #identifier_person_179412-176 Dettaglio
• Ge/Si(100) islands: growth dynamics versus growth rate, CAPELLINI, GIOVANNI; DE SETA, MONICA, , 2003Link identifier #identifier_person_83421-177 Dettaglio
• Ordering self-assembled islands without substrate patterning, CAPELLINI, GIOVANNI, , 2003Link identifier #identifier_person_172177-178 Dettaglio
• Strain relief mechanism in Ge/Si(100) islands, CAPELLINI, GIOVANNI; DE SETA, MONICA, , 2003Link identifier #identifier_person_168586-179 Dettaglio
• Evolution of the intermixing process in Ge/Si(111) Self-assembled islands, CAPELLINI, GIOVANNI; MOBILIO, SETTIMIO, , 2002Link identifier #identifier_person_149062-180 Dettaglio
• Influence of the growth parameters on self-assembled Ge islands on Si (100), CAPELLINI, GIOVANNI, , 2002Link identifier #identifier_person_177361-181 Dettaglio
• Intermixing-promoted scaling of Ge/Si(100) island sizes, CAPELLINI, GIOVANNI, , 2002Link identifier #identifier_person_63463-182 Dettaglio
• Photoluminescence of strained and relaxed multi-layered Ge islands on Si(001), CAPELLINI, GIOVANNI, , 2002Link identifier #identifier_person_142324-183 Dettaglio
• SiGe intermixing in Ge/Si(100) islands, CAPELLINI, GIOVANNI, , 2001Link identifier #identifier_person_120375-184 Dettaglio
• Formation of the wetting layer in Ge/Si(111) studied by STM, and EXAFS, CAPELLINI, GIOVANNI, , 2000Link identifier #identifier_person_78837-185 Dettaglio
• Ge-Si intermixing in Ge quantum dots on Si, CAPELLINI, GIOVANNI; MOBILIO, SETTIMIO, , 2000Link identifier #identifier_person_120519-186 Dettaglio
• Ge-Si intermixing in Ge quantum dots on Si, DI GASPARE, LUCIANA; MOBILIO, SETTIMIO, , 2000Link identifier #identifier_person_376-187 Dettaglio
• Ge-Si intermixing in Ge quantum dots on Si(001) and Si(111), CAPELLINI, GIOVANNI; MOBILIO, SETTIMIO, , 2000Link identifier #identifier_person_182769-188 Dettaglio
• Ge-Si intermixing in Ge quantum dots on Si(100) and Si(111), DI GASPARE, LUCIANA; MOBILIO, SETTIMIO, , 2000Link identifier #identifier_person_43713-189 Dettaglio
• Strain relaxation by pit formation in epitaxial SiGe alloy films grown on Si(001), CAPELLINI, GIOVANNI, , 2000Link identifier #identifier_person_144570-190 Dettaglio
• Atomic Force Microscopy Lithography as a nanodevice development technique, CAPELLINI, GIOVANNI, , 1999Link identifier #identifier_person_114745-191 Dettaglio
• Evolution of strained Ge islands grown on Si(111): a scanning probe microscopy study, CAPELLINI, GIOVANNI, , 1999Link identifier #identifier_person_143109-192 Dettaglio
• Influence of dislocations on vertical ordering of Ge islands in Si Ge multilayers grown by low pressure chemical vapour deposition, CAPELLINI, GIOVANNI, , 1999Link identifier #identifier_person_114237-193 Dettaglio
• Metal-Ge-Si diodes for near-infrared light detection, ASSANTO, GAETANO; CAPELLINI, GIOVANNI, , 1999Link identifier #identifier_person_178-194 Dettaglio
• Electronic states of thin epitaxial layers of Ge on Si(100), CAPELLINI, GIOVANNI, , 1998Link identifier #identifier_person_100756-195 Dettaglio
• Electronic states of thin epitaxial layers of Ge on Si(100), DI GASPARE, LUCIANA, , 1998Link identifier #identifier_person_45573-196 Dettaglio
• Further insight in Cromium growth on the surface of an organometallic polymer film, CAPELLINI, GIOVANNI, , 1998Link identifier #identifier_person_146220-197 Dettaglio
• Investigation of Ge on Si(100) quantum wells by Photoelectron Spectroscopies, CAPELLINI, GIOVANNI, , 1998Link identifier #identifier_person_98504-198 Dettaglio
• Metal-Semiconductor-Metal near infrared light detector based on epitaxial Ge on Si, ASSANTO, GAETANO; CAPELLINI, GIOVANNI, , 1998Link identifier #identifier_person_192311-199 Dettaglio
• Metal-Semiconductor-Metal Near Infrared Light Detector Based on Epitaxial Ge/Si, ASSANTO, GAETANO; CAPELLINI, GIOVANNI, , 1998Link identifier #identifier_person_170937-200 Dettaglio
• Spectroscopic ellipsometric study of strain relaxation and size evolution of Ge islands grown on Si(100), CAPELLINI, GIOVANNI, , 1998Link identifier #identifier_person_73974-201 Dettaglio
• Atomic force microscopy study of self-organized Ge islands grown on Si(100) by low pressure chemical vapor deposition, CAPELLINI, GIOVANNI, , 1997Link identifier #identifier_person_27803-202 Dettaglio
• Ge/Si (001) photodetector for near infrared light, ASSANTO, GAETANO; CAPELLINI, GIOVANNI, , 1997Link identifier #identifier_person_97202-203 Dettaglio
• Atomic Force Microscopy and Photoluminescence study of Ge layers and self-organized Ge quantum dots on Si(100), CAPELLINI, GIOVANNI, , 1996Link identifier #identifier_person_140873-204 Dettaglio
• Ge/Si(100) heterostructures: a Photoemission and low-energy Yield Spectroscopy investigation, CAPELLINI, GIOVANNI, , 1996Link identifier #identifier_person_153475-205 Dettaglio
• Low energy Yield Spectroscopy determination of band offsets: application to the epitaxial Ge/Si(100) heterostructure, CAPELLINI, GIOVANNI, , 1996Link identifier #identifier_person_181856-206 Dettaglio
• Low energy Yield Spectroscopy as a novel technique for determining band offsets: application to the c-Si/a-Si:H heterostructure, CAPELLINI, GIOVANNI, , 1995Link identifier #identifier_person_184138-207 Dettaglio

Libro

• CAPELLINI, GIOVANNI, Alternative semiconductor integration in Si microelectronics: materials, techniques & applications, vol. 125, pp. 1 92, 2014 Link identifier #identifier_person_187775-208Dettaglio

Contributo in volume e atti di convegno

• CAPELLINI, GIOVANNI, (Invited) Advancing Si Spin Qubit Research: Process Integration of Hall Bar FETs on Si/SiGe in a 200mm BiCMOS Pilot Line, ECS TRANSACTIONS, issn 1938-5862, vol. 114, pp. 109 121, 2024 Link identifier #identifier_person_106620-209Dettaglio
• CAPELLINI, GIOVANNI, Low Disorder and High Mobility 2DEG in Si/SiGe Fabricated in 200 mm BiCMOS Pilot line, ECS TRANSACTIONS, issn 1938-5862, vol. 114, pp. 123 131, 2024 Link identifier #identifier_person_182023-210Dettaglio
• CAPELLINI, GIOVANNI, The Lattice Strain Distribution in GexSn1-x Micro-Disks Investigated at the Sub 100-nm Scale, ECS TRANSACTIONS, issn 1938-5862, vol. 114, pp. 145 153, 2024 Link identifier #identifier_person_53483-211Dettaglio
• CAPELLINI, GIOVANNI; DI GASPARE, LUCIANA; DE SETA, MONICA, Microscopic modeling of interface roughness scattering and application to the simulation of quantum cascade lasers, issn 2158-3234, vol. 2022-, pp. 51 52, 2022 Link identifier #identifier_person_58406-212Dettaglio
• CAPELLINI, GIOVANNI, Modeling and design of an electrically pumped SiGeSn microring laser, 2022 Link identifier #identifier_person_58884-213Dettaglio
• MONTANARI, MICHELE; CIANO, CHIARA; CAPELLINI, GIOVANNI; DI GASPARE, LUCIANA; DE SETA, MONICA, Terahertz intersubband electroluminescence from n-type germanium quantum wells, pp. 1 1, 2021 Link identifier #identifier_person_154937-214Dettaglio
• PERSICHETTI, LUCA; MONTANARI, MICHELE; VIRGILIO, MICHELE; CIANO, CHIARA; ORTOLANI, MICHELE; CAPELLINI, GIOVANNI; DI GASPARE, LUCIANA; DE SETA, MONICA, THz Intersubband Emitter based on Silicon, pp. 1 1, 2021 Link identifier #identifier_person_198014-215Dettaglio
• PERSICHETTI, LUCA; CIANO, CHIARA; VIRGILIO, MICHELE; MONTANARI, MICHELE; DI GASPARE, LUCIANA; ORTOLANI, MICHELE; CAPELLINI, GIOVANNI; DE SETA, MONICA, Electron state coupling in asymmetric Ge/SiGe quantum wells (Conference Presentation), 2019 Link identifier #identifier_person_29408-216Dettaglio
• PERSICHETTI, LUCA; CIANO, CHIARA; DI GASPARE, LUCIANA; DE SETA, MONICA; CAPELLINI, GIOVANNI; VIRGILIO, MICHELE, N-Type Ge/SiGe Quantum Cascade Heterostructures for THz Emission, 2019 Link identifier #identifier_person_197795-217Dettaglio
• CAPELLINI, GIOVANNI, Quantum confinement effects in GeSn/SiGeSn heterostructure lasers, TECHNICAL DIGEST - INTERNATIONAL ELECTRON DEVICES MEETING, issn 0163-1918, vol. 134366, pp. 24.2.1 24.2.4, 2018 Link identifier #identifier_person_142008-218Dettaglio
• CAPELLINI, GIOVANNI, A NIR-LED based on tensile strained, heavily doped Ge/Si μ-strips fabricated in a BiCMOS pilot line, pp. 43 44, 2017 Link identifier #identifier_person_100402-219Dettaglio
• CAPELLINI, GIOVANNI, Epitaxy of direct bandgap group IV heterostructure lasers, pp. 175 176, 2017 Link identifier #identifier_person_77061-220Dettaglio
• CAPELLINI, GIOVANNI, Reduced threshold microdisk lasers from GeSn/SiGeSn heterostructures, pp. 15 16, 2017 Link identifier #identifier_person_151020-221Dettaglio
• CAPELLINI, GIOVANNI, Site controlled InAs/GaAs nanostructures on Si nano-tips, vol. 2017, 2017 Link identifier #identifier_person_36246-222Dettaglio
• CAPELLINI, GIOVANNI, On device concepts for CMOS-compatible edge-emitters based on strained germanium, PROCEEDINGS OF THE ... INTERNATIONAL CONFERENCE ON NUMERICAL SIMULATION OF OPTOELECTRONIC DEVICES, issn 2158-3234, vol. 2015-, pp. 129 130, 2015 Link identifier #identifier_person_28464-223Dettaglio
• CAPELLINI, GIOVANNI, Alternative High n-Type Doping Techniques in Germanium, ECS TRANSACTIONS, issn 1938-6737, vol. 64, pp. 163 171, 2014 Link identifier #identifier_person_103190-224Dettaglio
• CAPELLINI, GIOVANNI, CMOS-fabricated tensile Ge microstructures: towards an edge-emitting laser, pp. 133 134, 2014 Link identifier #identifier_person_76446-225Dettaglio
• CAPELLINI, GIOVANNI, Si CMOS compatible, compliant integration of lattice-mismatched semiconductors on Si(001): Example of fully coherent Ge/Si nanostructures, pp. 149 150, 2014 Link identifier #identifier_person_91821-226Dettaglio
• CAPELLINI, GIOVANNI, Tensile Strained Ge Layers Obtained via a Si-CMOS Compatible Approach, pp. 11 12, 2012 Link identifier #identifier_person_97323-227Dettaglio
• CAPELLINI, GIOVANNI; DE SETA, MONICA, Terahertz Spectroscopy of Germanium Quantum Wells on Silicon Substrate for Terahertz Photonics, INTERNATIONAL CONFERENCE ON INFRARED, MILLIMETER, AND TERAHERTZ WAVES, issn 2162-2027, 2012 Link identifier #identifier_person_194354-228Dettaglio
• DI GASPARE, LUCIANA; CAPELLINI, GIOVANNI, Towards substrate removal in quasi-optical Schottky detector arrays, 2011 Link identifier #identifier_person_38164-229Dettaglio
• MENEGHINI, CARLO; MOBILIO, SETTIMIO; CAPELLINI, GIOVANNI, MAGNETIC PROPERTIES OF COLLOIDAL COBALT NANOCLUSTERS, 2010 Link identifier #identifier_person_187153-230Dettaglio
• CAPELLINI, GIOVANNI; DE SETA, MONICA, Terahertz intersubband transitions in the conduction band of Ge/SiGe multi quantum wells, 2010 Link identifier #identifier_person_27071-231Dettaglio
• CAPELLINI, GIOVANNI, N-TYPE SIGE HETEROSTRUCTURES FOR THZ INTERSUBBAND TRANSITIONS, 2009 Link identifier #identifier_person_63596-232Dettaglio
• CAPELLINI, GIOVANNI, “Ge photodetectors integrated in CMOS photonic circuits, 2008 Link identifier #identifier_person_193476-233Dettaglio
• CAPELLINI, GIOVANNI, 10Gbit/s transceiver on silicon, 2008 Link identifier #identifier_person_46873-234Dettaglio
• CAPELLINI, GIOVANNI, Demonstration of First WDM CMOS Photonics Transceiver with Monolithically Integrated Photo-Detectors, vol. 2, pp. 91 92, 2008 Link identifier #identifier_person_60294-235Dettaglio
• CAPELLINI, GIOVANNI, High-speed, monolithic CMOS receivers with Ge on Si waveguide photodelectors, vol. 16, pp. 601 608, 2008 Link identifier #identifier_person_134414-236Dettaglio
• CAPELLINI, GIOVANNI, Monolithically Integrated High-Speed CMOS Photonic Transceivers, pp. 362 364, 2008 Link identifier #identifier_person_10460-237Dettaglio
• CAPELLINI, GIOVANNI, A 1550nm, 10Gbps monolithic optical receiver in 130nm CMOS with integrated Ge waveguide photodetector, pp. 28 30, 2007 Link identifier #identifier_person_127971-238Dettaglio
• CAPELLINI, GIOVANNI, High-speed, monolithic CMOS receivers at 1550nm with Ge on Si waveguide photodetectors, pp. 848 849, 2007 Link identifier #identifier_person_40002-239Dettaglio
• CAPELLINI, GIOVANNI, CMOS Photonics Using Germanium Photodetectors, ECS TRANSACTIONS, issn 1938-5862, vol. 3, 2006 Link identifier #identifier_person_164075-240Dettaglio
• CAPELLINI, GIOVANNI, SELF-ASSEMBLED GE ISLAND ON SI(001), 2004 Link identifier #identifier_person_158102-241Dettaglio
• CAPELLINI, GIOVANNI, Si/Ge intermixing and Island-Island Interaction in Ge/Si(100) Self-Assembled Islands, vol. 638, 2001 Link identifier #identifier_person_195569-242Dettaglio
• ASSANTO, GAETANO; CAPELLINI, GIOVANNI, METAL-SEMICONDUCTOR-METAL NEAR INFRARED LIGHT DETECTOR BASED ON EPITAXIAL GE ON SI, 1998 Link identifier #identifier_person_356-243Dettaglio
• CAPELLINI, GIOVANNI, Morphology evolution and growth dynamic of single- and multi-layers of Ge islands on Si (100), 1998 Link identifier #identifier_person_57941-244Dettaglio
• ASSANTO, GAETANO; CAPELLINI, GIOVANNI, NEAR INFRARED LIGHT DETECTORS BASED ON UHV_CVD EPITAXIAL GERMANIUM ON SILICON, 1998 Link identifier #identifier_person_175411-245Dettaglio